Product Description

Description:

• This device is an N-channel Power MOSFET  developed using the STripFET™ F6 technology  with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) inall packages.
• Technical sheet: https://alltransistors.com/adv/pdfview.php?doc=stp110n7f6.pdf&dire=_1

Features:

• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss

Applications:
• Switching application

Electrical ratings:

• VDS : Drain-source voltage = 68 V
• VGS : Gate- source voltage = ±20 V
• ID: -Drain current (continuous) at TC = 25 °C 110 A
         -Drain current (continuous) at TC = 100 °C 80 A
  
• Drain current (pulsed) TC = 25 °C 440 A
• PTOT Total dissipation at TC = 25 °C 176 W
• EAS(2): Single pulse avalanche energy=  185 mJ