STP110N7F6 N-channel 110A 68V (TO-220) Mosfet
N-channel 68 V, 0.0055 Ω typ., 110 A, STripFET™ F6 Power MOSFET in a TO-220 package:
- VDS : Drain-source voltage = 68 V
- VGS : Gate- source voltage = ±20 V
- ID: -Drain current (continuous) at TC = 25 °C 110 A
-Drain current (continuous) at TC = 100 °C 80 A
- Drain current (pulsed) TC = 25 °C 440 A
- PTOT Total dissipation at TC = 25 °C 176 W
- EAS(2): Single pulse avalanche energy= 185 mJ
Product Description
Description:
- This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) inall packages.
- Technical sheet: https://alltransistors.com/adv/pdfview.php?doc=stp110n7f6.pdf&dire=_1
Features:
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
Applications:
• Switching application
Electrical ratings:
- VDS : Drain-source voltage = 68 V
- VGS : Gate- source voltage = ±20 V
- ID: -Drain current (continuous) at TC = 25 °C 110 A
-Drain current (continuous) at TC = 100 °C 80 A
- Drain current (pulsed) TC = 25 °C 440 A
- PTOT Total dissipation at TC = 25 °C 176 W
- EAS(2): Single pulse avalanche energy= 185 mJ
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