3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs

SKU: SLY-IC163 Category:

Product Description


  • These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement mode silicon gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
  • 3.1A, 100V
  • rDS(ON)= 1.200Ω
  • Temperature Compensating PSPICE™ Model
  • Peak Current vs Pulse Width Curve
  •  UIS Rating Curve
  •  Related Literature
                        – TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
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