2SK3878 (TO-3PN) MOSFET

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2SK3878 (TO-3PN) MOSFET Silicon N-Channel MOS:

Drain-source voltage, VDSS= 900 V
Drain-gate voltage (RGS= 20 kΩ), VDGR= 900 V
Gate-source voltage, VGSS= ± 30 V
Drain power dissipation (Tc = 25°C), PD= 150 W

SKU: SLY-IC400 Category: Mosfet

Product Description

FEATURES:

Low drain-source ON resistance: RDS (ON)= 1.0Ω (typ.)
High forward transfer admittance:⎪Yfs⎪ = 7.0 S (typ.)
Low leakage current: IDSS = 100μA (max) (VDS = 720 V)
Enhancement model: Vth= 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta=25°C):

Drain-source voltage, VDSS= 900 V
Drain-gate voltage (RGS= 20 kΩ), VDGR= 900 V
Gate-source voltage, VGSS= ± 30 V
Drain power dissipation (Tc = 25°C), PD= 150 W

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