J493

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MOS FIELD EFFECT TRANSISTOR J493

P-CHANNEL POWER MOS FET INDUSTRIAL USE
This product is P-Channel MOS Field Effect Transistor designed for high current switching applications.

SKU: SLY-IC194 Category: Mosfet

Product Description

DESCRIPTION:

This product is P-Channel MOS Field Effect Transistor designed for high current switching applications.

FEATURES:

Super low on-state resistance

RDS(on)1= 100 mΩ(MAX.) (VGS= –10 V, ID= –8 A)

RDS(on)2= 185 mΩ(MAX.) (VGS= –4 V, ID= –8 A)

Low Ciss: Ciss= 1210 pF (TYP.)Built-in gate protection diode

ABSOLUTE MAXIMUM RATINGS (TA= 25°C)

Drain to Source Voltage (VGS= 0 V ) VDSS=–60V
Gate to Source Voltage (VDS= 0 V)VGSS(AC)= +_20V
Gate to Source Voltage (VDS= 0 V) VGSS(DC)= –20, 0V
Drain Current (DC) ID(DC)= 16A
Drain Current (pulse)=ID(pulse)= +_64A
Total Power Dissipation (TC= 25°C) PT= 30W
Total Power Dissipation (TA= 25°C) PT= 2.0W

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