Product Description

• This device is an N-channel Power MOSFET developed using ST’s STripFET™ DeepGATE™ technology.
• The device has a new gate structure and is specially designed to minimize on-state resistance to provide superior switching performance
• Technical sheet: https://pdf1.alldatasheet.com/datasheet-pdf/view/1256170/VBSEMI/80N70F4.html

• Order code: STP80N70F4
• VDSS: 68 V
• RDS(on) max < 9.8 mΩ
• ID: 85 A
• N-channel enhancement mode
• 100% avalanched rated
• Low gate charge
• Very low on-resistance

• Switching applications