MGD623S IGBT (TO-3P) MOSFET

MGD623S IGBT (TO-3P) MOSFET:

• Low Saturation Voltage VCE(sat)=1.8V typ.
• High Speed tf=120ns typ.
• Low VF FRD Included VF=1.2V typ.
SKU: SLY-IC403 Category:

Product Description

Features:
• Low Saturation Voltage VCE(sat)=1.8V typ.
• High Speed tf=120ns typ.
• Low VF FRD Included VF=1.2V typ.
Package:
TO-3P
Applications:
• Current Resonance Inverter Switching
• Induction Heating Cooking
Absolute maximum ratin:
  • Collector to Emitter Voltage, VCES= 600V
  • Gate to Emitter Voltage, VGES= ±30V
  • Continuous Collector Current, IC= 50A
  • Pulsed Collector Current, IC(pulse)= 100 A
  • Diode Continuous Forward Current, IF= 30A
  • Diode pulsed Forward Current, IF(pulse)= 60 A
  • Maximum Power Dissipation, PC= 150 (Tc=25°C)W
  • Thermal Resistance IGBT, θj-c IGBT= 0.833°C /W
  • Thermal Resistance Di, θj-c Di= 1.67°C /W
  • Junction Temperature, Tj= 150°C
  • Storage Temperature, Tstg= -55 to 150°C

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