IRF7103Q MOSFET [SO-8]
IRF7103Q MOSFET [SO-8]:
- These HEXFET Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per siliconarea
Specifically designed for Automotive applications, these HEXFET Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per siliconarea. Additional features of these Automotive qualified HEXFET Power MOSFET’s are a 175°Cjunction operating temperature, fast switching speed and improved repetitive avalanche rating.
These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce boar Ad space and is also available in Tape & Reel
- RDS(on)max (mΩ): ID:
– 130@VGS = 10V – 3.0 A
– 200@VGS= 4.5V – 1.5
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