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STP110N8F6 N-channel 110A 80V (TO-220) Mosfet
STP110N8F6 N-channel 110A 80V (TO-220) Mosfet
N-channel 80 V, 0.0056 Ω typ.,110 A, STripFET™ F6 Power MOSFET in a TO-220 package:
- VDS : Drain-source voltage = 80 V
- VGS : Gate-source voltage = ±20 V
- ID : Drain current (continuous) at TC = 25 °C= 110 A
- ID : Drain current (continuous) at TC = 100 °C = 85 A
- IDM(1): Drain current (pulsed) = 440 A
- PTOT Total dissipation at TC = 25 °C = 200 W
Product Description
Description:
- This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.
- The resulting Power MOSFET exhibits very low RDS(on) in all packages.
- Technical sheet: https://www.st.com/content/ccc/resource/technical/document/datasheet/09/00/d1/b6/ce/f3/4e/0a/DM00130827.pdf/files/DM00130827.pdf/jcr:content/translations/en.DM00130827.pdf
Features:
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
Applications:
• Switching applications
Electrical ratings:
- VDS : Drain-source voltage = 80 V
- VGS : Gate-source voltage = ±20 V
- ID : Drain current (continuous) at TC = 25 °C= 110 A
- ID : Drain current (continuous) at TC = 100 °C = 85 A
- IDM(1): Drain current (pulsed) = 440 A
- PTOT Total dissipation at TC = 25 °C = 200 W
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