Product Description

DESCRIPTION:

• N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using “trench” technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode power supplies and general purpose switching applications.
• Technical sheet: https://pdf1.alldatasheet.com/datasheet-pdf/view/17808/PHILIPS/IRFZ44.html

PINNING – TO220AB:

• 1 gate
• 2 drain
• 3 source
• Tab drain