P 501B-8P DIP8

The AP501 uses a high reliability InGaP/GaAs HBT process technology and does not require any external matching components.
The module operates off a +12V supply and does not requiring any negative biasing voltages; an internal active bias allows the amplifier to maintain high linearity over temperature.
T= 25 ºC
Vcc=12V
Vpd=5V
Icq=820mA
R7=0Ω, 50Ω

SKU: SLY-IC259 Category: CHIPS

Product Description

DESCRIPTION:

The AP501 is a high dynamic range power amplifier in a RoHS-compliant flange-mount package.
The multi-stage amplifier module has 32.5 dB gain, while being able to achieve high performance for PCS-band applications with +36 dBm of compressed 1dB power.
The module has been

internally optimized for driver applications provide -62 dBc ACPR at 27 dBm for IS-95A applications or -55 dBc ACLR at 26.5 for wCDMA applications.
The module can be biased down for current when higher efficiency is required.

Product Features:

•1930 – 1990 MHz

•32.5 dB Gain

•+36 dBm P1dB

•-62 dBc ACPR @ 27 dBm IS-95A linear power

•-55 dBc ACLR @ 26.5 dBm wCDMA linear power

•+12 V Single Supply

•Power Down Mode

•Bias Current Adjustable

Applications:

•Final stage amplifiers for repeaters

•Optimized for driver amplifier PA mobile infrastructure