EON EN25D80
- The EN25F80 is a 8M-bit (1024K-byte) Serial Flash memory, with advanced write protection
mechanisms, accessed by a high speed SPI-compatible bus. - The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction.
• Single power supply operation
– Full voltage range: 2.7-3.6 volt
• 8 Mbit Serial Flash
– 8 M-bit/1024 K-byte/4096 pages
– 256 bytes per programmable page
Product Description
- The EN25F80 is a 8M-bit (1024K-byte) Serial Flash memory, with advanced write protection
mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. - The EN25F80 is designed to allow either single Sector at a time or full chip erase operation. The
EN25F80 can be configured to protect part of the memory as the software protected mode. The device can sustain a minimum of 100K program/erase cycles on each sector. - Techncal sheet: https://datasheetspdf.com/pdf-file/610334/Eon/EN25F80/1
FEATURES
• Single power supply operation
– Full voltage range: 2.7-3.6 volt
• 8 Mbit Serial Flash
– 8 M-bit/1024 K-byte/4096 pages
– 256 bytes per programmable page
• High performance
– 100MHz clock rate
• Low power consumption
– 5 mA typical active current
– 1 μA typical power down current
• Uniform Sector Architecture:
– 256 sectors of 4-Kbyte
– 16 blocks of 64-Kbyte
– Any sector or block can be erased individually
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