HY1707 (TO-220)
HY1707 (TO-220) N–Channel Enhancement Mode MOSFET:
- VDSS: Drain–Source Voltage= 70V
- VGSS: Gate–Source Voltage= ±25V
- TJ: Maximum Junction Temperature= 175°C
- TSTG: Storage Temperature Range= –55 to 175°C
Product Description
FEATURES:
- 70V/80A, RDS(ON)= 6mΩ (typ.) @ VGS=10V
- Avalanche Rated
- Reliable and Rugged
- Lead Free and Green Devices Available (RoHS Compliant)
- Technical sheet: http://www.alldatasheet.fr/view.jsp?Searchword=HY170
APPLICATIONS:
- Power Management for Inverter Systems.
CARATERISTIQUE:
- VDSS: Drain–Source Voltage= 70V
- VGSS: Gate–Source Voltage= ±25V
- TJ: Maximum Junction Temperature= 175°C
- TSTG: Storage Temperature Range= –55 to 175°C
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