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NAND512W3A2DN
NAND512W3A2DN
NAND512W3A2DN:
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The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories thatuses the Single Level Cell (SLC) NAND cell technology
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High density NAND Flash memories–512 Mbit memory array–Cost effective solutions for mass storage applications
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NAND interface–x8 or x16 bus width–Multiplexed Address/ Data
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Supply voltage: 1.8V, 3.0V
Product Description
DESCRIPTION:
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The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories thatuses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family.
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The NAND512R3A2C, NAND512R4A2C, NAND512W3A2C, and NAND512W4A2C have a density of 512 Mbits and operate with either a 1.8V or 3V voltage supply.
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The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending onwhether the device has a x8 or x16 bus width.
- Technical sheet: https://pdf1.alldatasheet.com/datasheet-pdf/view/194817/STMICROELECTRONICS/NAND512W3A2C.html
Features:
●High density NAND Flash memories
–512 Mbit memory array
–Cost effective solutions for mass storage applications
●NAND interface
–x8 or x16 bus width
–Multiplexed Address/ Data
●Supply voltage: 1.8V, 3.0V
●Page size
–x8 device: (512 + 16 spare) Bytes
–x16 device: (256 + 8 spare) Words
●Block size
–x8 device: (16K + 512 spare) Bytes
–x16 device: (8K + 256 spare) Words
●Page Read/Program
–Random access: 12μs (3V)/15μs (1.8V) (max)
–Sequential access: 30ns (3V)/50ns (1.8V) (min)
–Page Program time: 200μs (typ)
●Copy Back Program mode
●Fast Block Erase: 2ms (Typ)
●Status Register
●Electronic Signature
●Chip Enable ‘don’t care’
●Serial Number option
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