- Your cart is empty
- Continue Shopping
MGD623S IGBT (TO-3P) MOSFET
MGD623S IGBT (TO-3P) MOSFET
MGD623S IGBT (TO-3P) MOSFET:
• Low Saturation Voltage VCE(sat)=1.8V typ.
• High Speed tf=120ns typ.
• Low VF FRD Included VF=1.2V typ.
Product Description
Features:
• Low Saturation Voltage VCE(sat)=1.8V typ.
• High Speed tf=120ns typ.
• Low VF FRD Included VF=1.2V typ.
Package:
TO-3P
Applications:
• Current Resonance Inverter Switching
• Induction Heating Cooking
Absolute maximum ratin:
- Collector to Emitter Voltage, VCES= 600V
- Gate to Emitter Voltage, VGES= ±30V
- Continuous Collector Current, IC= 50A
- Pulsed Collector Current, IC(pulse)= 100 A
- Diode Continuous Forward Current, IF= 30A
- Diode pulsed Forward Current, IF(pulse)= 60 A
- Maximum Power Dissipation, PC= 150 (Tc=25°C)W
- Thermal Resistance IGBT, θj-c IGBT= 0.833°C /W
- Thermal Resistance Di, θj-c Di= 1.67°C /W
- Junction Temperature, Tj= 150°C
- Storage Temperature, Tstg= -55 to 150°C
Reviews
There are no reviews yet.