Product Description

DESCRIPTION:

• Specifically designed for Automotive applications, these HEXFET Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per siliconarea. Additional features of these Automotive qualified HEXFET Power MOSFET’s are a 175°C
  junction operating temperature, fast switching speed and improved repetitive avalanche rating.
• These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
• The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce boar Ad space and is also available in Tape & Reel

SPECIFICATION:

• VDSS=50V
• RDS(on)max (mΩ):                                              ID: