FDMC8884
FDMC8884 N-Channel Power Trench MOSFET 30V, 15A, 19m Ω:
- This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to mini mize the on-state resistance.
- Max rDS(on)= 19mΩ at VGS= 10V, ID= 9.0A
- Max rDS(on)= 30mΩ at VGS = 4.5V, ID= 7.2A
Product Description
- This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to mini mize the on-state resistance.
- This device is well suited for Power Management and load switchingapplications common in Notebook Computers and Portable Battery Packs.
- Technical sheet: https://pdf1.alldatasheet.com/datasheet-pdf/view/245230/FAIRCHILD/FDMC8884.html
Features:
- Max rDS(on)= 19mΩ at VGS= 10V, ID= 9.0A
- Max rDS(on)= 30mΩ at VGS = 4.5V, ID= 7.2A
- High performance trchnology For extremely low rDS(on)
- Termination is Lead-free and RoHS Complian
Application:
- High side in DC – DC Buck Converters
- Notebook battery power management
- Load switch in Notebook
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