FDMC8884 N-Channel Power Trench MOSFET 30V, 15A, 19m Ω:

  • This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to mini mize the on-state resistance.
  • Max rDS(on)= 19mΩ at VGS= 10V, ID= 9.0A
  • Max rDS(on)= 30mΩ at VGS = 4.5V, ID= 7.2A
SKU: SLY-IC129 Category:

Product Description

  • This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to mini mize the on-state resistance.
  • This device is well suited for Power Management and load switchingapplications common in Notebook Computers and Portable  Battery Packs.
  • Technical sheet: https://pdf1.alldatasheet.com/datasheet-pdf/view/245230/FAIRCHILD/FDMC8884.html

 

Features:
  • Max rDS(on)= 19mΩ at VGS= 10V, ID= 9.0A
  • Max rDS(on)= 30mΩ at VGS = 4.5V, ID= 7.2A
  • High performance trchnology For extremely low rDS(on)
  • Termination is Lead-free and RoHS Complian
Application:
  • High side in DC – DC Buck Converters
  • Notebook battery power management
  • Load switch in Notebook

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