25N120 IGBT 50A 1200V (TO-3P)
IGBT transistor 25N120 TO-3P:
- Type: IGBT
- Model #: 25N120
- Enclosure: TO-3P
- Nominal current: 50 A.
- Nominal voltage: 1200 V.
- Max power: 349 W
Product Description
The description :
- The transistor is an electronic component with three active electrodes which is used in most electronic circuits, it allows to control a current or a voltage on the output electrode This is an IGBT transistor.
- An IGBT (Insulated Gate Bipolar Transistors) consists of a voltage controlled MOSFET followed by a high current transistor
It has 3 terminals, which are:
- Transmitter.
- Collector.
- Based.
Specifications:
- Type: IGBT
- Model #: 25N120
- Enclosure: TO-3
- Nominal current: 50 A.
- Nominal voltage: 1200 V.
- Max power: 349 W
- Junction operating temperature range: -55 to 150C 0
- Technical sheet :https://www.onsemi.com/pdf/datasheet/ngtb25n120flw-d.pdf
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