C3807
C3807 – 30V, NPN Transistor
- Collector-to-Base Voltage : Vcbo = 30V
- Collector-to-Emitter Voltage : Vceo = 25V
Product Description
Description:
1. Large current capacity (IC=2A).
2. Adoption of MBIT process.
3. High DC current gain (hFE=800 to 3200).
4. Low collector-to-emitter saturation voltage (V CE(sat)≤0.5V).
5. High VEBO(VEBO≥15V).
Applications:
1. Low frequency general-purpose amplifiers, drivers.
Absolute Maximum Ratings:
1. Collector-to-Base Voltage : Vcbo = 30V
2. Collector-to-Emitter Voltage : Vceo = 25V
3. Emitter-to-Base Voltage : Vebo = 15V
4. Collector Current : Ic = 2A
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