Details:

• Type designation: 2SB1128
• Transistor Material: Si
• Polarity: PNP
• Maximum collector power dissipation (Pc): 10 W
• Maximum voltage of the base of the collector | Vcb | : 50 V
• Maximum collector-emitter voltage | Vce |: 50 V
• Maximum voltage of the transmitter base | Veb | : 5 V
• Maximum collector current | Ic max | : 2 A
• Max. Operating junction temperature (Tj): 185 ° C
• Forward Current Transfer Ratio (hFE), MIN: 5000 Noise figure, dB: –